APTM20HM20FTG APTM20HM20FTG C rev 4 october, 2014 www.microsemi.com 1 C 7 s3 g3 s4 g4 nt c2 s1 g1 out2 out1 vbus q1 q2 s2 g2 0/vbu s nt c1 q3q4 absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source voltage 200 v i d continuous drain current t c = 25c 89 a t c = 80c 66 i dm pulsed drain current 356 v gs gate - source voltage 30 v r dson drain - source on resistance 24 m p d maximum power dissipation t c = 25c 357 w i ar avalanche current (repetitive and non repetitive) 89 a e ar repetitive avalanche energy 50 mj e as single pulse avalanche energy 2500 v dss = 200v r dson = 20m typ @ tj = 25c i d = 89a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? fredfets - low r dson - low input and miller capacitance - low gate charge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance ? lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant full - bridge mosfet power module downloaded from: http:///
APTM20HM20FTG APTM20HM20FTG C rev 4 october, 2014 www.microsemi.com 2 C 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 250a 200 v i dss zero gate voltage drain current v gs = 0v,v ds = 200v t j = 25c 250 a v gs = 0v,v ds = 160v t j = 125c 1000 r ds(on) drain C source on resistance v gs = 10v, i d = 44.5a 20 24 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gss gate C source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1mhz 6850 pf c oss output capacitance 2180 c rss reverse transfer capacitance 97 q g total gate charge v gs = 10v v bus = 100v i d = 75a 112 nc q gs gate C source charge 43 q gd gate C drain charge 47 t d(on) turn-on delay time inductive switching @ 125c v gs = 15v v bus = 133v i d = 75a r g = 5 28 ns t r rise time 56 t d(off) turn-off delay time 81 t f fall time 99 e off turn-off switching energy v gs = 15v v bus = 133v i d = 75a r g = 5 ? t j = 25c 455 j e off turn-off switching energy t j = 125c 531 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit i s continuous source current (body diode) tc = 25c 89 a tc = 80c 66 v sd diode forward voltage v gs = 0v, i s = - 75a 1.3 v dv/dt peak diode recovery x 8 v/ns t rr reverse recovery time i s = - 75a v r = 133v di s /dt = 100a/s t j = 25c 220 ns t j = 125c 420 q rr reverse recovery charge t j = 25c 1.07 c t j = 125c 2.9 x dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 75a di/dt 700a/s v r v dss t j 150c downloaded from: http:///
APTM20HM20FTG APTM20HM20FTG C rev 4 october, 2014 www.microsemi.com 3 C 7 thermal and package characteristics symbol characteristic min max unit r thjc junction to case thermal resistance 0.35 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 sp4 package outline (dimensions in mm) see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM20HM20FTG APTM20HM20FTG C rev 4 october, 2014 www.microsemi.com 4 C 7 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pu lse duration 5.5v 6v 6.5v 7v 7.5v 9v 0 50 100 150 200 250 0 5 10 15 20 25 i d , drain current (a) v ds , drain to source voltage (v) v gs =15&10v low voltage output characteristics t j =25c t j =125c 0 40 80 120 160 200 23456789 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cy cle v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 0 20406080100120 i d , drain current (a) r ds (on) vs drain current r ds(on) drain to source on resistance normalized to v gs =10v @ 44.5a 0 20 40 60 80 100 25 50 75 100 125 150 i d , dc dr ain cu r r en t ( a) t c , case temperature (c) dc drain current vs case temperature downloaded from: http:///
APTM20HM20FTG APTM20HM20FTG C rev 4 october, 2014 www.microsemi.com 5 C 7 0.95 1.00 1.05 1.10 1.15 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 t j , junction temperature (c) on resistance vs temperature r ds (on), drain to source on resistance (normalized) v gs =10v i d = 44.5a 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 25 50 75 100 125 150 t c , case temperature (c) threshold voltage vs temperature v gs (th), threshold voltage (normalized) dc line 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 i d , drain current (a) v ds , drain to source voltage (v) maxim um safe operating area limited by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage v ds =40v v ds =100v v ds =160v 0 2 4 6 8 10 12 0 25 50 75 100 125 gate char ge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =75a t j =25c downloaded from: http:///
APTM20HM20FTG APTM20HM20FTG C rev 4 october, 2014 www.microsemi.com 6 C 7 td (on) td (off) 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 t d(on) and t d(off) (ns) i d , drain current (a) delay tim es vs current v ds =133v r g =5 ? t j =125c l=100h t r t f 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 t r and t f (ns) i d , drain current (a) rise and fall tim es vs current v ds =133v r g =5 ? t j =125c l=100h 0 200 400 600 800 1000 1200 0 25 50 75 100 125 150 e off (j) i d , drain current (a) sw itching energy vs current v ds =133v r g =5 ? t j =125c l=100h 500 750 1000 1250 1500 5 10152025303540 e off (j) gate resistance (ohms) sw itching energy vs gate resistance v ds =133v i d =75a t j =125c l=100h zvs 0 50 100 150 200 250 300 350 10 20 30 40 50 60 70 80 frequency (khz) i d , drain current (a) operating frequency vs drain current v ds =133v d=50% r g =5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 i dr , reverse drain current (a) v sd , source to drain voltage (v) source to drain diode forward voltage downloaded from: http:///
APTM20HM20FTG APTM20HM20FTG C rev 4 october, 2014 www.microsemi.com 7 C 7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by impli cation, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer s final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes alle gations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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